BUK9606-55B,118 datasheet

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О ДАТАШИТЕ

• Маркировка
  BUK9606-55B,118
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK9606-55B,118 Configuration: Single Continuous Drain Current: 146 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 60nC @ 5V Gate-source Breakdown Voltage: 15 V ID_COMPONENTS: 1950503 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 258W Power Dissipation: 258000 mW Rds On (max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0054 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 934057312118::BUK9606-55B /T3::BUK9606-55B /T3
• Количество страниц
  13 шт.
• Форматы файла
  HTML, PDF

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